Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation

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United States of America Patent

PATENT NO 9112068
APP PUB NO 20140096820A1
SERIAL NO

13646120

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Abstract

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Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A structure includes a crystalline semiconductor having at least one surface, a doped crystalline region disposed in at least one selected area of the semiconductor surface, and a dopant-containing amorphous silicon layer stack containing a same dopant as present in the doped crystalline region on at least a portion of the semiconductor surface outside the selected area, wherein the dopant-containing amorphous silicon layer stack passivates the portion of the semiconductor surface on which it is disposed.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Neumayer, Deborah A Danbury, US 60 1843
Saenger, Katherine L Ossining, US 127 2896

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