Copper residue chamber clean

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9114438
APP PUB NO 20140345645A1
SERIAL NO

13972704

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Abstract

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Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoinkis, Mark Fishkill, US 29 838
Joseph, Eric White Plains, US 17 608
Miyazoe, Hiroyuki White Plains, US 103 889
Yan, Chun San Jose, US 61 1877

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