Resistance change memory
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United States of America Patent
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Aug 25, 2015
Issued Date -
N/A
app pub date -
Sep 5, 2013
filing date -
May 10, 2013
priority date (Note) -
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Abstract
According to one embodiment, a memory includes memory cells between first conductive lines and second conductive lines. A control circuit is configured to apply a first potential to a first end of a selected first conductive line connected to the selected memory cell among the first conductive lines and first ends of unselected second conductive lines not connected to the selected memory cell among the second conductive lines, apply a second potential larger than the first potential to a first end of a selected second conductive line connected to the selected memory cell among the second conductive lines, apply third potentials smaller than the second potential to first ends of unselected first conductive lines not connected to the selected memory cell among the first conductive lines respectively, and change values of the third potentials based on an address of the selected first conductive line.
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