Nonvolatile semiconductor memory device with a write sequence including a setting and removing operation
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United States of America Patent
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Aug 25, 2015
Grant Date -
Jan 15, 2015
app pub date -
Oct 24, 2013
filing date -
Jul 12, 2013
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device according to an embodiment comprises: a memory cell array including a plurality of memory cells provided one at each of intersections of a plurality of first lines and a plurality of second lines and each storing data by a data storing state of a filament; and a control circuit configured to execute a write sequence that writes data to the memory cell, the write sequence including: a setting operation that applies a setting pulse having a first polarity to the memory cell; and a removing operation that applies a removing pulse having a second polarity opposite to the first polarity to the memory cell; and the control circuit, during execution of the write sequence, is configured to repeatedly execute the setting operation until the memory cell attains a desired data storing state, and then to execute the removing operation.
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