Capacitor structure and stack-type capacitor structure

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United States of America Patent

PATENT NO 9117589
APP PUB NO 20150069573A1
SERIAL NO

14156478

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Abstract

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A capacitor structure is provided, which includes a conductive substrate, a first dielectric layer, and a first metal layer. The conductive substrate includes a first surface and at least one first concave located on the first surface. The first dielectric layer covers the first surface and the first concave. The first metal layer covers the first dielectric layer, wherein the first dielectric layer and the first metal layer respectively have concave structures corresponding to the first concave. A stack-type capacitor structure is also provided.

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Patent Owner(s)

Patent OwnerAddress
EPISTAR CORPORATIONHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Wei-Kang Taoyuan County, TW 55 311
Huang, Chih-Shu Taoyuan County, TW 27 183
Pan, Shyi-Ming Taoyuan County, TW 92 438

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