Method of forming the buffer layer in the LTPS products
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United States of America Patent
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Aug 25, 2015
Grant Date -
Oct 30, 2014
app pub date -
Apr 24, 2014
filing date -
Apr 24, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
The present disclosure disclosed a method of forming the buffer layer in the LTPS products. The method comprises the following steps: heating the substrate to make the alkali metal ions diffuse to the surface of the glass; washing the substrate by acid to remove the alkali metal ions on the surface of the glass; forming the buffer layer on the glass which has been heated and washed by acid, wherein the material of the buffer layer is SiOx. The method of the present disclosure based on the design of the single buffer layer, it can greatly promote the capacity and can economize the gas. Furthermore, it can avoid the cross contamination of the different layers so as to promote characteristic of the element.
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