Mechanisms for forming stressor regions in a semiconductor device
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United States of America Patent
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Aug 25, 2015
Grant Date -
Jun 5, 2014
app pub date -
Feb 5, 2014
filing date -
Dec 13, 2011
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Abstract
A method of manufacturing a semiconductor device includes performing a pre-amorphous implantation (PAI) process to form an amorphized region on a substrate. The method also includes forming a stress film over the substrate, and performing an annealing process to recrystallize the amorphized region after the stress film is formed. The method further includes forming a recess region on the substrate. The recess region overlies the recrystallized region. The method additionally includes forming an epitaxial stress-inducing material in the recess region.
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