Semiconductor device and structure

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United States of America Patent

PATENT NO 9117749
SERIAL NO

13836080

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Abstract

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A semiconductor device, including: a first transistor sharing a first diffusion with a second transistor; a third transistor sharing a second diffusion with the second transistor; and at least one programmable resistor; wherein the at least one programmable resistor is connected to the first diffusion and the second diffusion, wherein the at least one programmable resistor includes one of the following: memristor, transition metal oxides, polymeric memristor, ferroelectric memristor, spintronic memristor, spin transfer torque, phase-change structure, programmable metallization structure, conductive-bridging structure, magnetoresistive structure, chalcogenide structure.

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Patent Owner(s)

  • MONOLITHIC 3D INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cronquist, Brian San Jose, US 284 3809
Or-Bach, Zvi San Jose, US 534 17764

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