Pinch-off control of gate edge dislocation
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United States of America Patent
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Aug 25, 2015
Grant Date -
Aug 7, 2014
app pub date -
Apr 4, 2014
filing date -
Dec 13, 2011
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Abstract
A method of manufacturing a semiconductor device includes providing a substrate having a gate stack, and performing a pre-amorphous implantation (PAI) process to form an amorphized region on the substrate. The method also includes performing an annealing process to recrystallize the amorphized region after the stress film is formed. The annealing process includes a preheat at a temperature in a range from about 400° C. to about 550° C. and an annealing temperature equal to or greater than about 900° C., and the annealing process recrystallizes the amorphized region.
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