Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal
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United States of America Patent
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Aug 25, 2015
Grant Date -
Oct 3, 2013
app pub date -
Nov 27, 2012
filing date -
Mar 29, 2012
priority date (Note) -
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Abstract
A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.
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