Plasma etching method
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United States of America Patent
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Sep 1, 2015
Grant Date -
Jul 3, 2014
app pub date -
Aug 16, 2012
filing date -
Sep 5, 2011
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Abstract
A plasma etching method forms a tapered recess portion in a wide-gap semiconductor substrate. The method includes forming on the substrate K an etching film having an etching speed higher than that of the substrate K, and forming a mask M having an opening on the high-speed etching film. The substrate K with the etching film and the mask is then placed on a platen and heated to a temperature equal to or higher than 200 ° C., a plasma is generated from an etching gas supplied into a processing chamber, and a bias potential is applied to the platen to etch substrate.
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