Enhanced thin film deposition

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United States of America Patent

PATENT NO 9127351
SERIAL NO

13766469

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Abstract

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Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

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Patent Owner(s)

  • ASM INTERNATIONAL N.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Elers, Kai-Erik Vantaa, FI 50 7580
Li, Wei-Min Espoo, FI 27 3631
Rahtu, Antti Vantaa, FI 14 900
Tois, Eva Espoo, FI 46 4971

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