Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch
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United States of America Patent
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Sep 8, 2015
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Jun 15, 2011
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Jun 15, 2011
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a pulse train laser scribing process using multiple-pulse bursts to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
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