Compositions for etching and methods of forming a semiconductor device using the same
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United States of America Patent
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Sep 15, 2015
Grant Date -
Apr 16, 2015
app pub date -
Dec 17, 2014
filing date -
Oct 18, 2011
priority date (Note) -
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Abstract
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
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