One-time programmable memory cell
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United States of America Patent
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Sep 15, 2015
Grant Date -
Mar 13, 2014
app pub date -
Sep 10, 2012
filing date -
Sep 10, 2012
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Abstract
A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics.
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