Nonvolatile semiconductor memory device and method for manufacturing same
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United States of America Patent
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Sep 15, 2015
Grant Date -
Sep 25, 2014
app pub date -
Sep 6, 2013
filing date -
Mar 20, 2013
priority date (Note) -
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body including a plurality of electrode layers and a plurality of first insulating layers; a first channel body layer penetrating the stacked body; a memory film; an interlayer insulating film provided on the stacked body; a selection gate electrode provided on the interlayer insulating film; a second channel body layer penetrating the selection gate electrode and the interlayer insulating film and connected to the first channel body; a gate insulating film provided between the selection gate electrode and the second channel body layer; a second insulating layer provided on the gate insulating film and on the selection gate electrode; a contact layer provided on the second insulating layer; and a diffusion layer provided between the contact layer and the second insulating layer and connected to the second channel body layer and the contact layer.
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