Solid-state image sensor, method of manufacturing the same, and camera

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United States of America Patent

PATENT NO 9136407
APP PUB NO 20140078337A1
SERIAL NO

14026460

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Abstract

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A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tsuchiya, Masayuki Ebina, JP 91 2358

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