Selective emitter nanowire array and methods of making same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9136410
APP PUB NO 20140366934A1
SERIAL NO

14467029

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Abstract

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Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED SILICON GROUP INC173 BEDFORD ROAD LINCOLN MA 01773

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Black, Marcie R Lincoln, US 46 490
Jura, Mike Santa Monica, US 5 22
Miller, Jeff Brookline, US 91 2264
Modawar, Faris Orem, US 22 165
Murphy, Brian Revere, US 202 6619

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