Bulk acoustic wave resonator having piezoelectric layer with multiple dopants

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United States of America Patent

PATENT NO 9136819
APP PUB NO 20140118090A1
SERIAL NO

13662460

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Abstract

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A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.

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Patent Owner(s)

  • AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choy, John Westminster, US 64 2228
Feng, Chris Fort Collins, US 41 1251
Grannen, Kevin J Thornton, US 59 1188
Ionash, Ivan Fort Collins, US 3 90
Lamers, Tina Fort Collins, US 2 79

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