Semiconductor device manufacturing method

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United States of America Patent

PATENT NO 9142419
APP PUB NO 20140141617A1
SERIAL NO

14164878

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a semiconductor device manufacturing method, on a film to be processed, a mask material film is formed which has pattern openings for a plurality of contact patterns and connection openings for connecting adjacent pattern openings in such a manner that the connection between them is constricted in the middle. Then, a sidewall film is formed on the sidewalls of the individual openings in the mask material film, thereby not only making the diameter of the pattern openings smaller but also separating adjacent pattern openings. Then, the film to be processed is selectively etched with the mask material film and sidewall film as a mask, thereby making contact holes.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Watanabe, Shinya Tokyo, JP 269 1628

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