Semiconductor device
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United States of America Patent
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Sep 22, 2015
Grant Date -
Nov 20, 2014
app pub date -
Aug 7, 2014
filing date -
Aug 23, 2012
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.
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