Tilt implantation for forming FinFETs
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United States of America Patent
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Sep 22, 2015
Grant Date -
Mar 19, 2015
app pub date -
Sep 18, 2013
filing date -
Sep 18, 2013
priority date (Note) -
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Abstract
Methods for fabrication of fin devices for an integrated circuit are provided. Fin structures are formed in a semiconductor material, where the fin structures include sidewalls and tops. Dopant implantation is performed at a tilt angle to form a doped region along the sidewalls and the tops of the fin structures, where the semiconductor material is maintained at an elevated temperature during the dopant implantation. The elevated temperature prevents amorphization of the fin structures during the dopant implantation. A field effect transistor is formed from the fin structures. The field effect transistor has a threshold voltage that is based on the dopant implantation.
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