Semiconductor diode device
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United States of America Patent
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Sep 22, 2015
Grant Date -
Jan 1, 2015
app pub date -
Mar 7, 2014
filing date -
Jul 1, 2013
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.
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