Semiconductor light emitting device
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United States of America Patent
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Sep 22, 2015
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N/A
app pub date -
Jul 29, 2014
filing date -
Sep 19, 2013
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Abstract
According to one embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes. The stacked body includes a light emitting layer. The first and second electrodes are provided on the stacked body. The device further includes an insulating layer covering the stacked body, a first conversion electrode electrically connected to the first electrode, a second conversion electrode electrically connected to the second electrode (50), and a light blocking body covering a side surface of the stacked body. The first conversion electrode, the second conversion electrode, and the light blocking body include, in a portion contacting with the insulating layer, a member with a reflectance of 80 percent or more for light emitted from the light emitting layer.
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