Phase change current density control structure

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United States of America Patent

PATENT NO 9147838
APP PUB NO 20140374685A1
SERIAL NO

14481411

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Abstract

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A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Campbell, Kristy A Boise, US 139 2482
Daley, Jon Boise, US 32 365

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