High density vertical structure nitride flash memory
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United States of America Patent
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Oct 6, 2015
Grant Date -
Aug 7, 2014
app pub date -
Apr 4, 2014
filing date -
Feb 12, 2008
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Abstract
A charge trap type of memory having a memory channel with vertical and possibly horizontal components is described. The invention includes a new operation method of simultaneous hole and electron injection operation for high speed and high reliability non-volatile memories, as well as high-density non-volatile memories. Array implementations for high-density memory arrays and high-speed memory arrays and their fabrication methods are also described.
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