Methods of making word lines and select lines in NAND flash memory

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United States of America Patent

PATENT NO 9153595
APP PUB NO 20140078826A1
SERIAL NO

13619553

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Abstract

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A NAND flash memory chip includes word lines formed by etching through concentric conductive loops and, in the same etch step, etching through a conductive strip to form select lines. A conductive loop forms two word lines which are in different erase blocks and are separately controlled by peripheral circuits.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pham, Tuan San Jose, US 85 2266
Sel, Jongsun Los Gatos, US 23 334
Tokunaga, Kazuya San Francisco, US 26 182

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