Ring-shaped magnetoresistive memory device and writing method thereof

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United States of America Patent

PATENT NO 9159394
APP PUB NO 20150023092A1
SERIAL NO

14267904

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Abstract

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A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse. The first surface is opposite to the second surface. An extension direction of the first conductor is perpendicular to an extension direction of the second conductor. A time delay is between the first magnetic field pulse and the second magnetic field pulse.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGYNO 123 SEC 3 UNIVERSITY RD YUNLIN COUNTY DOULIU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Ching-Ming Yunlin County, TW 23 121
Wu, Te-Ho Yunlin County, TW 10 42
Yang, Jyh-Shinn Taipei, TW 1 0

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