Dividing method for wafer

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United States of America Patent

PATENT NO 9159622
APP PUB NO 20150044857A1
SERIAL NO

14454136

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Abstract

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A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

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Patent Owner(s)

Patent OwnerAddress
DISCO CORPORATION13-11 OMORI-KITA 2-CHOME OTA-KU TOKYO 143-8580
IWATANI CORPORATIONOSAKA 541-0053

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aida, Toshihiro Tokyo, JP 3 184
Biro, Tomoya Tokyo, JP 2 3
Maemoto, Nozomi Tokyo, JP 1 3
Masuda, Takatoshi Tokyo, JP 23 127
Matsuzaki, Sakae Tokyo, JP 16 95
Senoo, Takehiko Osaka, JP 11 218
Yoshino, Yu Amagasaki, JP 9 308

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