Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse

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United States of America Patent

PATENT NO 9165644
SERIAL NO

13470030

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Abstract

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In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES U S INC400 STONEBREAK ROAD EXTENSION MALTA NY 12020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dinh, John Dublin, US 33 305
Echeverry, Juan Pablo Saenz Mountain View, US 9 85
Hollmer, Shane C Grass Valley, US 31 1215
Kamalanathan, Deepak Santa Clara, US 25 129
Koushan, Foroozan Sarah San Jose, US 17 150
Kozicki, Michael Phoenix, US 16 161

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