Selective etching method

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United States of America Patent

PATENT NO 9169437
APP PUB NO 20150048053A1
SERIAL NO

14385007

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Abstract

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A layer of a metal selected from titanium, niobium, tungsten, molybdenum, ruthenium, rhodium, arsenic, aluminum and gallium, an oxide of the metal, a nitride of the metal, silicon nitride, hafnium nitride, tantalum nitride, or an alloy of these metals, the layer being provided on an underlying base material selected from glass, silicon, copper and nickel, is selectively etched with an alkaline etching solution containing a predefined complexing agent.

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Patent Owner(s)

Patent OwnerAddress
JCU CORPORATIONTOKYO 1100015

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cordonier, Christopher Kanagawa, JP 12 57
Kumagai, Shingo Kanagawa, JP 2 5
Nabeshima, Mitsuhiro Kanagawa, JP 1 5
Takahashi, Naoki Kanagawa, JP 418 3234

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