Memristors with asymmetric electrodes
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United States of America Patent
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Oct 27, 2015
Grant Date -
May 31, 2012
app pub date -
Jul 28, 2009
filing date -
Jul 28, 2009
priority date (Note) -
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Abstract
Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
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