Memory device with control gate oxygen diffusion control and method of making thereof
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United States of America Patent
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Nov 3, 2015
Grant Date -
Nov 27, 2014
app pub date -
May 22, 2014
filing date -
May 21, 2013
priority date (Note) -
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Abstract
An embodiment relates to a memory device that includes a semiconductor channel, a tunnel dielectric located over the semiconductor channel, a charge storage region located over the tunnel dielectric, a blocking dielectric located over the charge storage region, and a control gate located over the blocking dielectric. An interface between the blocking dielectric and the control gate substantially prevents oxygen diffusion from the blocking dielectric into the control gate.
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