Nonvolatile semiconductor memory device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9177809
APP PUB NO 20150008501A1
SERIAL NO

14321994

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

According to one embodiment, a nonvolatile semiconductor memory device includes a stacked layer structure including first to n-th semiconductor layers (n is a natural number equal to or larger than 2) stacked in a first direction which is perpendicular to a surface of a semiconductor substrate, and an upper insulating layer stacked on the n-th semiconductor layer, the stacked layer structure extending in a second direction which is parallel to the surface of the semiconductor substrate, and first to n-th NAND strings provided on surfaces of the first to n-th semiconductor layers in a third direction which is perpendicular to the first and second directions respectively.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kiyotoshi, Masahiro Yokkaichi, JP 99 3657
Sakuma, Kiwamu Yokohama, JP 64 1741

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 May 3, 2027
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00