Dual silicide regions and method for forming the same
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United States of America Patent
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Nov 3, 2015
Grant Date -
Jul 30, 2015
app pub date -
Jan 29, 2014
filing date -
Jan 29, 2014
priority date (Note) -
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Abstract
A method for forming dual silicide regions includes forming semiconductor regions having a first thickness and a second thickness different from the first thickness and forming a dielectric layer over the semiconductor regions. Holes are opened up in the dielectric layer down to a first depth corresponding with the first or second thickness leaving a thickness of the dielectric layer over the other of the first or second thickness. A first silicide is formed at the first depth in the holes using a first deposited material. The holes are extended through the thickness of the dielectric layer to reach a second depth. A second silicide is formed at the second depth in the holes using a different material than the first deposited material.
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