Method for processing at least one crystalline silicon-wafer with a thermal budget or a solar-cell wafer with a thermal budget by a laser beam

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United States of America Patent

PATENT NO 9177860
APP PUB NO 20140154831A1
SERIAL NO

14094863

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Abstract

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In different embodiments, a method is provided for processing at least one crystalline Silicon-wafer or a Solar-cell wafer. The method may include: a movement of the wafer with respect to a laser producing a laser beam; and therefore the formation of a laser channel in the wafer by means of a laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel.

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Patent Owner(s)

Patent OwnerAddress
SOLARWORLD INDUSTRIES GMBHMARTIN-LUTHER-KING-STR 24 BONN 53175

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koenig, Joachim Haenichen, DE 2 14
Kutzer, Martin Penig, DE 24 121
Richter, Matthias Coswig, DE 49 743

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