Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile
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United States of America Patent
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Nov 3, 2015
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app pub date -
Sep 19, 2014
filing date -
Sep 19, 2014
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an elliptical or a spatio-temporal controlled laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
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