Method for manufacturing fin semiconductor device using dual masking layers
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United States of America Patent
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Nov 3, 2015
Grant Date -
Sep 5, 2013
app pub date -
Aug 28, 2012
filing date -
Mar 2, 2012
priority date (Note) -
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device, includes preparing a structure body. In the structure body, a fin extending in a first direction is formed on an upper surface of a semiconductor substrate, a lower-side mask member is provided on the fin, and an upper-side mask member that is wider than the fin and the lower-side mask member is provided on the lower-side mask member. The method includes implanting an impurity into the semiconductor substrate with the upper-side mask member and the lower-side mask member as a mask, removing the upper-side mask member, forming a gate insulator film on a side surface of the fin, forming a conductive film that covers the fin and the lower-side mask member, forming a mask for gate having a pattern extending in a second direction, and removing selectively the conductive film to form a gate electrode.
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