Memory elements using self-aligned phase change material layers and methods of manufacturing same
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United States of America Patent
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Nov 3, 2015
Grant Date -
May 1, 2014
app pub date -
Jan 7, 2014
filing date -
Apr 4, 2006
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Abstract
A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.
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