Mechanism of forming a trench structure
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United States of America Patent
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Nov 10, 2015
Grant Date -
Apr 16, 2015
app pub date -
Nov 27, 2013
filing date -
Oct 4, 2013
priority date (Note) -
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Abstract
Embodiments of a mechanism for forming a shallow trench isolation (STI) structure filled with a flowable dielectric layer are provided. The mechanism involves using one or more low-temperature thermal anneal processes with oxygen sources and one or more microwave anneals to convert a flowable dielectric material to silicon oxide. The low-temperature thermal anneal processes with oxygen sources and the microwave anneals are performed at temperatures below the ranges that could cause significant dopant diffusion, which help dopant profile control for advanced manufacturing technologies. In some embodiments, an implant to generate passages in the upper portion of the flowable dielectric layer is also used in the mechanism.
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