Method providing an epitaxial photonic device having a reduction in defects and resulting structure

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United States of America Patent

PATENT NO 9184191
APP PUB NO 20150108596A1
SERIAL NO

14055990

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Abstract

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A method of forming a photonic device and resulting structure are described in which the photonic device is epitaxially grown over a substrate surface vertically, and laterally over trench isolation regions formed in the substrate surface.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Meade, Roy Boise, US 55 288

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