Method of producing semiconductor wafer, and semiconductor wafer
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United States of America Patent
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Nov 10, 2015
Grant Date -
Apr 3, 2014
app pub date -
Dec 6, 2013
filing date -
Jun 10, 2011
priority date (Note) -
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Abstract
There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0≦x≦1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.
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