Capping thin-film resistors to control interface oxidation

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United States of America Patent

PATENT NO 9184379
SERIAL NO

14335504

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Abstract

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A thin cap of metal alloy or metal-silicon compound is formed over a ternary oxide or ternary nitride ReRAM embedded resistor. At least one metal in the cap is the same as a metal in the embedded resistor. If the cap oxidizes slightly (e.g., incidental to a vacuum break, anneal, or subsequent treatment or deposition), the overall resistance of the memory cell is much less affected than it would be by the same amount of oxidation directly on a surface of the uncapped oxide or nitride embedded resistor.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023
INTERMOLECULAR INC3011 N FIRST STREET SAN JOSE CA 95134
SANDISK 3D LLC951 SANDISK DRIVE MILPITAS CA 95034

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Yun San Jose, US 443 6534

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