Photomask blank, method for manufacturing photomask, and method for manufacturing phase shift mask
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United States of America Patent
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Nov 17, 2015
Grant Date -
Nov 21, 2013
app pub date -
May 13, 2013
filing date -
May 16, 2012
priority date (Note) -
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Abstract
A light-shielding film 2 formed on a transparent substrate 1 has a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The light-shielding film 2 has an optical density of 2 or higher and 4 or lower and has a reflection-preventing function. The layer made of a chromium-containing material including tin, which constitutes the light-shielding film 2, can cause a significant increase in the etching rate at the time of chlorine-containing dry etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision.
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