Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method

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United States of America Patent

PATENT NO 9190283
APP PUB NO 20140087560A1
SERIAL NO

14009485

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Abstract

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The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions.

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Patent Owner(s)

  • ALCHIMER

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mevellec, Vincent Chaville, FR 16 57
Suhr, Dominique Chatenay-Malabry, FR 10 28

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