Methods for making a semiconductor device with shaped source and drain recesses and related devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9190517
APP PUB NO 20150054032A1
SERIAL NO

14518590

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method for making a semiconductor device includes forming at least one gate stack on a layer comprising a first semiconductor material and etching source and drain recesses adjacent the at least one gate stack. The method further includes shaping the source and drain recesses to have a vertical side extending upwardly from a bottom to an inclined extension adjacent the at least one gate stack.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION;STMICROELECTRONICS, INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Latulipe, Douglas Guilderland, US 2 10
Loubet, Nicolas Guilderland, US 244 2037
Reznicek, Alexander Troy, US 1406 11101

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 May 17, 2027
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00