Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
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United States of America Patent
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Nov 24, 2015
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May 22, 2014
app pub date -
Jan 28, 2014
filing date -
Jun 24, 2011
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Abstract
A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
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