SRAM cell and method for manufacturing the same
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United States of America Patent
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Nov 24, 2015
Grant Date -
Mar 21, 2013
app pub date -
Nov 21, 2011
filing date -
Sep 21, 2011
priority date (Note) -
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Abstract
A SRAM cell and a method for manufacturing the same are disclosed. In one embodiment, the SRAM cell may include: a semiconductor layer; and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the semiconductor layer, wherein the first FinFET includes a first fin formed by patterning the semiconductor layer, the first fin having a first top surface and a first bottom surface, wherein the second FinFET includes a second fin formed by patterning the semiconductor layer, the second fin having a second top surface and a second bottom surface, and wherein the first top surface is substantially flush with the second top surface, the first and second bottom surfaces abut against the semiconductor layer, and the height of the second fin is greater than the height of the first fin.
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