Self-aligned floating gate in a vertical memory structure
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United States of America Patent
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Nov 24, 2015
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app pub date -
Oct 13, 2014
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Dec 12, 2012
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Abstract
Methods for building a memory device or electronic system may include a memory cell body extending from a substrate, a self-aligned floating gate separated from the memory cell body by a tunneling dielectric film, and a control gate separated from the self-aligned floating gate by a blocking dielectric film. The floating gate is flanked by the memory cell body and the control gate to form a memory cell, and the self-aligned floating gate is at least as thick as the control gate.
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