Substrate cleaning method and substrate cleaning device

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United States of America Patent

PATENT NO 9209010
APP PUB NO 20130056033A1
SERIAL NO

13579772

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Abstract

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A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325
IWATANI CORPORATIONOSAKA 541-0053

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsui, Hidefumi Nirasaki, JP 20 143
Moriya, Tsuyoshi Tokyo, JP 154 1601
Narushima, Masaki Nirasaki, JP 28 1237

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